Silicon Carbide is a semiconductor material, and has a much higher resistivity than metallic resistance materials. Room temperature resistivity is fairly high, and falls with increasing temperature to a minimum value at about 600-900°C. At elements temperature above 900° C. Resistivity increase with rising temperature, as shown in figure. Therefore it is necessary to adjust the constant power with a feed back type V in VxI transfer. On three-phase loads with Silicon Carbide is suggested the use of a feed back in VxI to obtain a power adjustment constant. This is necessary to compensate changes in the value of resistance with temperature and age of the elements. The value at the end of their use is four times the initial value. CD Automation can controll this kind of heathing elements with REVO CL, REVO M 1PH and Multidrive 1PH.

Category:

SIC Elements 1PH Connection

Product rt1
rt1
Multidrive-1ph-power-control
REVO CL Multidr.1PH
Load
Load Voltage 480-600V-690*V 480-600V-690*V 480-600V-690**V
Current Range
10:700A 10:700A 25:1600A
Input
10K Pot.
4:20mA
0:10V
Firing
PHASE ANGLE
FEED BACK | CONTROL
V to VxI transfer
USE VOLTAGE RESERVE OF 100%
OPTION
FUSE + FUSE HOLDER 35:40A 35:40A
INTERNAL FUSE HOLDER
>40A >40A
cUL us Pending Pending
COMMUNICATION / PROGRAM.
RS485 Modbus RTU
PROFIBUS + CAN
Config. Keypad Frontale
Configurator PC Win.
CD KP 48×96 o REVO KP2
= Standard
= Option
* 690V availablefrom 400 to 700A
** 690V Multidr. available from 850 to 2700A
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