Silicon Carbide is a semiconductor material, and has a much higher resistivity than metallic resistance materials. Room temperature resistivity is fairly high, and falls with increasing temperature to a minimum value at about 600-900°C. At elements temperature above 900° C. Resistivity increase with rising temperature, as shown in figure. Therefore it is necessary to adjust the constant power with a feed back type V in VxI transfer. On three-phase loads with Silicon Carbide is suggested the use of a feed back in VxI to obtain a power adjustment constant. This is necessary to compensate changes in the value of resistance with temperature and age of the elements. The value at the end of their use is four times the initial value. CD Automation can controll this kind of heathing elements with REVO C or REVEX 1PH.

SIC Elements 1PH Connection

Product

REVO C 1PH
Load
Load Voltage480-600V480-600V-690*V
Current Range
30:280A30:2100A
Input
10K Pot.
4:20mA
0:10V
Firing
PHASE ANGLE
FEED BACK | CONTROL
V to VxI transfer
USE VOLTAGE RESERVE OF 100%
OPTION
FUSE + FUSE HOLDER 30:40A30:40A
INTERNAL FUSE HOLDER
>40A
cUL us up to 700A, UL >700A
COMMUNICATION / PROGRAM.
RS485 Modbus RTU
PROFINET + Modbus TCP Ethernet
Config. Frontal Keypad
Configurator PC Win.
REVO KP3
= Standard
= Option
* 690V available from 60 to 2100A
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